SANYO Semiconductor Co., Ltd.

Environmentally-Conscious Semiconductor Products

Power Supply ICs

Optimizing power supply ICs and motor driver ICs for mobile devices
One-half the Ron/A achieved
Power IC Processes

Ultra-low ON resistance

One-half the Ron/A of conventional SANYO processes achieved

  • 0.25µm technology adopted (for a narrow cell pitch)
  • Gate Tox film thicknesses reduced (to support reduced power)
  • Dual gates used (to improve p-channel capability)
  • Thick-film metal used
    (1.5 times more compared with conventional SANYO processes)

High-speed switching supported

Increase in Qg due to miniaturization minimized

  • Ron/Qg value equivalent to that yielded by conventional SANYO technology (0.8µm) attained
  • Gate capacitance reduced by density profile design using T-CAD
  • Titanium salicide used (for reduced Rg)

N-channel power construction for reduced malfunctioning

Generation of noise causing small-signal area malfunctions minimized by improving the n-channel LDMOS construction

Lineup of many and varied devices

All voltage bands required for mobile devices covered

  • 1-cell, 2-cell lithium-ion batteries
  • External power supply (12V input) supported
  • Selection of optimum devices for required voltages possible
Results of characteristic improvements
fsw Waveforms Conditions
1MHz REF

Horizontal axis: 250ns/div

CH1 (Yellow):SW

  • VDD=3.0V
  • VIN=6.0V
  • VO=2.27V setting
  • IO=260mA

Jitter generation

New constructions

Horizontal axis:250ns/div

CH1 (Yellow):SW

  • VDD=3.0V
  • VIN=6.0V
  • VO=2.27V setting
  • IO=260mA

Horizontal axis:250ns/div

CH1 (Yellow):SW

  • VDD=3.0V
  • VIN=6.0V
  • VO=2.27V setting
  • IO=600mA
Transistor (3.6V MOS Tr) Nch
Pch
Transistor (3.6V MOS Tr)
with HV Sub isolation
Nch
Pch
Transistor (6V MOS Tr) Nch *
Pch *
Transistor (16.5V MOS Tr) Nch *
Pch *
Transistor (6V LDMOS Tr) Nch
Pch *
Transistor (11V LDMOS Tr) Nch
Pch *
Transistor (14V LDMOS Tr) Nch
Transistor (16.5V LDMOS Tr) Nch *
Pch *
Transistor (6V LDMOS Tr)
within PIA/PWA
Nch
Transistor (11V LDMOS Tr)
within PIA/PWA
Nch
Transistor (16.5V LDMOS Tr)
within PIA/PWA
Nch *
PIS Capacitor LV 3.6V
HV 16.5V
MIM Capacitor 3.6V *
BJT V-NPN 11V
L-PNP 11V
Diff Resistor 2kΩ/sq
Poly Resistor 1kΩ/sq
450kΩ/sq
Clamp diode 3.6V *

* Optional devices

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High efficiency of approx. 92%(3A) achieved with low ON resistanceSynchronous Rectification DC-DC Converters with Built-in FET

  • Simple design of single-chip power supplies combined with an ON resistance equivalent to that of discrete FETs

High efficiency, Small package

3A, 1ch step-down switching regulator [LV5854M]

  • Frequency: 1MHz
  • High-side: 70mΩ, Low-side: 30mΩ,
    upper and lower FETs built-in
  • Built-in overcurrent protection and overheat protection function
  • Package: MFP12S(225mil) size
    5.0mm×6.4mm with a heat dissipation pad

High efficiency of 92%(3A) or so achieved with low ON resistance

Synchronous rectification DC-DC converters with built-in FET: LV58XX series lineup

Type No. Input voltage(V) Output current(A) Frequency(kHz) ON resistance
high/low sides(Ω)
Functions Package
LV5851M 5.0 to 18 3 500 0.06/0.03 PWM type, PbyP-OCP, OVP MFP8(225mil)
LV5854M 4.5 to 18 3 1000 0.06/0.03 PWM type, Hiccup-OCP, OVP,P-Good MFP12S(225mil)
LV5855MX 8.0 to 18 2 385 0.13/0.13 PWM type, PbyP, Hiccup-OCP, OVP, Discharge MFP8(200mil)

SBD Rectification DC-DC Converters

LV58XX series

  • High efficiency of 90% achieved with low ON resistance FET output
  • Pin compatibility provided for all 4 models
  • Design changes easily accomplished to support output current or input voltage changes
Input voltage 18V 28V
Output current 2A LV5803M LV5808MX
2.5A LV5807MX, LV5809MX -
3A LV58071VH
(under development)
Latch-off type OCP
LV5806MX

5V/2.2MHz DC-DC Converters

  • Synchronous rectification, high efficiency, current feedback, Hiccup
  • More coil space saved by 2.2MHz high-speed switching
  • LV5071M and LV5072M are pin compatible.
Type No. Input voltage Output current Package
LV5071M to 5.5V 1A MFP12S(225mil)
LV5072M to 5.5V 2A MFP12S(225mil)

N-N drive, high efficiency, high performanceWithstand Voltages up to 42V, Complete Lineup of Synchronous Rectification Controllers

  • High-speed drive of external MOSFETs at 300kHz to 1MHz
  • Realizing high-efficiency, compact solutions
  • Stable power supply solutions including external MOSFETs offered
  • Optimally suited to reducing standby power consumption in assembled products
Type No. Input voltage Channels Description
LV5747TT to 42V 1ch Fold-back droop type
LV5749V to 42V 1ch Synchronous operation
LV5761V to 42V 1ch Synchronous operation + Fold-back
LV5052V to 16V 2ch Synchronous operation/Multi-phase possible
LV5053V to 16V 1ch Synchronous operation

Compact, High-Heat-Dissipation Packages LDO

  • Low-voltage drive 1.8V and up (LV590XX series)
  • Applications with minimal levels of heat generation enabled by two power supply inputs
Type No. Input voltage Output current Package
LV59001M to 6V 1A MFP8(200mil)
LV59012M/18M/33M to 6V 1A MFP8(200mil)
LV59700MX 3.5 to 15V 1A MFP8(200mil)

80µA ultra-low current consumptionDC-DC Chopper Controllers

LV5764 (under development)

  • 50µA (typ) circuit operation current under light loads
  • 42V input, switching frequency: 2.3MHz

500µA low current consumption2-Channel Synchronous Rectification DC-DC Controllers

LV5058 (under development)

These controllers manage the circuit operation currents of ICs under light loads, and reduce the current consumption of the ICs to below 500µA. Under light loads, they switch from synchronous rectification to hysteresis converters and ensure high efficiency under all load conditions. 42V input supported.

DC-DC Converters+LDO

  • Costs reduced and space saved using composite ICs
Type No. Input voltage Package Specifications
LV5074 to 5.5V MFP12S DCDC+LDO
LV5097 to 5.5V VCT20 DCDC+LDO+LDO

High Wwithstand Voltage Large Current
(input voltage 57)
Synchronous Rectification
Step-down DC-DC Converter IC

TN8D/TN5D series

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