Flash Memory/EEPROM

Programming speed 5 times faster than existing SPI NOR Type flash Memory
SPI NOR Serial Flash Memory

By incorporating unique high-speed write mode technology, SANYO Semiconductor Co., Ltd. offers the world's fastest1 page programming speed for NOR type serial interface flash memory in 8-Mbit (LE25FW806/808) and 16-Mbit (LE25FW1606/1608) SPI serial flash memory devices.

These products can rewrite data more quickly, with no need to change existing programming methods.
This means that, when used in firmware storage applications and small-volume data storage applications in products such as hard disk drives, optical disk drives, printers, AV equipment and module equipment, users can rewrite the user data faster, streamline their software writing processes and upgrade the versions of programs for their products more speedily.

Note 1: As of June 5, 2007

Main features

1. Page program time: 0.3ms standard, 0.5ms max.
2. Sector erase time: 100ms standard, 400ms max.; chip erase time: 0.5 s. standard, 5 s. max.
3. Data read speed:
   400 Mbps with 50 MHz SCK (LE25FW808, LE25FW1608)
   50 Mbps with 50 MHz SCK (LE25FW806, LE25FW1606)

Overview

Today, flash memory is used to store programs and data in many different electronic products.
However, to take the company's existing 16-Mbit serial flash memory as an example, since it requires up to 20.5 seconds for full-memory data programming, there are a number of problems in the ease and convenience of using the memory.
These problems include the need to write multiple device simultaneously using gang programmers before mounting the Memory onto the circuit boards.

The new products incorporate SANYO Semiconductor's unique high-speed write mode technology to achieve the world's fastest programming speed, which enables 16-Mbit full-memory programming in only 4.1 seconds (maximum).
As a result, individual data writing during testing is now practically possible, and even when firmware needs to be updated after the Memory have been mounted on the circuit boards or after the products have been shipped, the data can be updated quickly with no stress for the users.

The LE25FW808 and LE25FW1608 incorporate high-speed read technology, which delivers a readout speed on a par with the 16-bit parallel devices that saw practical application for the first time in the company's 4-Mbit devices in 2005 (see Note 2).
By providing a data transfer speed equivalent to the parallel flash Memory, which could not be provided by existing NOR type serial flash Memory, it is now possible to reduce the initial startup time of products.
This also has the advantage of reducing the DRAM and SRAM devices that were needed in past high-speed operations and helping lower the cost of the finished products that incorporate them.

Note 2: As of December 16, 2005

Features

1. Page program speed: Max. 0.5ms
   In terms of maximum speed, page programming is 5 times faster (maximum) than the company's existing devices.
   The maximum time required for 16-Mbit full-memory programming is 4.1 seconds.
2. Sector erase time: Max. 400ms; Chip erase time: Max. 5 s.
   The maximum time required for 16-Mbit full memory data erasure is 5 seconds.
3. Data read speed: 400 Mbps (with the 50 MHz clock signal supplied to the SCK pin)
   (LE25FW808, LE25FW1608)
   A read speed 8 times faster than that of standard SPI serial flash Memory is achieved using a mode setting based on command input.
4. Interface: SPI serial
   Standard SPI serial read/write interface supported
5. Sector size: Both 4-Kbyte (small sectors) and 64-Kbyte (sectors) supported
   Besides supporting regular 64-Kbyte sectors, small 4-Kbyte sectors are provided as a standard feature.

Specifications

1. Supply voltage range: 2.7 V to 3.6 V
2. Maximum operating clock: 50 MHz [SPI bus]
3. Operating temperature range: 0 to 70°C (-40 to +85 °C supported as an option)
4. Interface: SPI serial
5. Page program time: 0.3ms standard, 0.5ms max.
6. Sector erase time: 100ms standard, 400ms max.; chip erase time: 0.5 s. standard, 5 s. max.
7. Data read speed:
   400 Mbps with 50 MHz SCK (LE25FW808, LE25FW1608)
   50 Mbps with 50 MHz SCK (LE25FW806, LE25FW1606)
8. Sector size: Both 4-Kbyte (small sectors) and 64-Kbyte (sectors) supported

Type Number	Package	Package size(unit : mm) W × H × T
LE25FW806MA	MFP8	6.4×6.35×1.7
LE25FW806TT LE25FW808TT	MSOP8	6.3×5.6×0.85
LE25FW1606FN LE25FW1608FN	VSON8	6.0×5.0×0.85

Flash products are licensed from Silicon Storage Technology, Inc., (USA), and manufactured and sold by SANYO Semiconductor Co., Ltd.

Please note that though all information given, including specifications, was correct as of the press announcement on June 6, 2007, the information may no longer be current.